A SIMPLIFIED APPROACH TO IMPURITY-BAND TAILS IN HEAVILY DOPED SEMICONDUCTORS

被引：1

作者：

CHAIYASITH, P ^{[1
]}

KOKPOL, S ^{[1
]}

SAYAKANIT, V ^{[1
]}

机构：

[1] CHULALONGKORN UNIV, FAC SCI, DEPT PHYS, BANGKOK 10500, THAILAND

来源：

PHYSICS LETTERS A | 1983年 / 98卷 / 5-6期

关键词：

D O I：

10.1016/0375-9601(83)90870-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：273 / 276

页数：4

共 50 条

[1] IMPURITY-BAND TAILS BASED ON SEMIEMPIRICAL PSEUDOPOTENTIALS IN HEAVILY DOPED SEMICONDUCTORS
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[4] EFFECTS OF IMPURITY-BAND TAILS ON AUGER RECOMBINATION IN SEMICONDUCTORS
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[8] Structure of the impurity band in heavily doped nonmagnetic semiconductors
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[10] IMPURITY BAND TAILS IN DEGENERATE SEMICONDUCTORS
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