THEORY OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS WITH OVERLAPPING ELECTRONIC ORBITALS

被引：16

|

作者：

MAJLIS, N ^{[1
]}

ANDA, E ^{[1
]}

机构：

[1] UNIV FED FLUMINENSE,DEPT FIS,MORRO DE SAO JOAO BATISTA,RJ,BRAZIL

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 08期

关键词：

D O I：

10.1088/0022-3719/11/8/021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1607 / 1617

页数：11

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