BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS

被引：206

|

作者：

MORGAN, TN

机构：

来源：

PHYSICAL REVIEW | 1965年 / 139卷 / 1A期

关键词：

D O I：

10.1103/PhysRev.139.A343

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：A343 / &

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