BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS

被引：206

作者：

MORGAN, TN

机构：

来源：

PHYSICAL REVIEW | 1965年 / 139卷 / 1A期

关键词：

D O I：

10.1103/PhysRev.139.A343

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A343 / &

共 50 条

[21] DENSITY OF STATES IN HEAVILY DOPED STRONGLY COMPENSATED SEMICONDUCTORS WITH CORRELATED IMPURITY DISTRIBUTION
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[24] Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands
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[25] BROADENING OF IMPURITY BANDS IN CRYSTALS WITH DEFECTS
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[28] DIFFUSION IN HEAVILY DOPED SEMICONDUCTORS
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[29] PHOTOEMISSION LINESHAPES OF IMPURITY LEVELS IN HEAVILY DOPED SEMICONDUCTORS - P-WAVE RESONANCES
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