DIFFUSION IN HEAVILY DOPED SEMICONDUCTORS

被引：0
|
作者：
MOKHOV, EN [1 ]
KOPROV, SK [1 ]
VODAKOV, YA [1 ]
机构：
[1] ACAD SCI USSR,SEMICOND INST,LENINGRAD,USSR
来源：
SOVIET PHYSICS SOLID STATE,USSR | 1972年 / 13卷 / 12期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：3120 / 3122
页数：3
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