ELECTRON MOBILITY IN HEAVILY DOPED SEMICONDUCTORS

被引：0
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作者：
DAKHOVSKII, IV
POLYANSK.TA
SAMOILOV.AG
SHMARTSE.YV
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1971年 / 4卷 / 11期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1857 / +
页数：1
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