Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands

被引：11

作者：

Khan, A.

Das, A.

机构：

[1] Electrocom Corp, Potomac, MD 20859 USA

[2] Vidyasagar Univ, Dept Phys & Techno Phys, Midnapore 721102, W Bengal, India

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 89卷 / 03期

关键词：

D O I：

10.1007/s00339-007-4160-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A formula for carrier concentration, and a relationship between mobility and diffusivity, have been presented for degenerate semiconductors with a nonparabolic energy band structure under the influence of a magnetic field. The relationships are general; they involve no approximation related to the comparative values of energy bandgap and spin orbit coupling. They should therefore, be applicable to both non-degenerate and degenerate semiconductors. They are quite suitable for the investigation of electrical transport in heavily doped semiconductors under the influence of a magnetic field.

引用

页码：695 / 699

页数：5

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