STRUCTURE OF IMPURITY BANDS IN LIGHTLY DOPED SEMICONDUCTORS

被引:0
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作者
SHKLOVSKII, BI
EFROS, AL
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 05期
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O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:487 / 506
页数:20
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