STRUCTURE OF IMPURITY BANDS IN LIGHTLY DOPED SEMICONDUCTORS

被引：0

作者：

SHKLOVSKII, BI

EFROS, AL

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 05期

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暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：487 / 506

页数：20

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[1] STRUCTURE OF IMPURITY BANDS IN LIGHTLY DOPED SEMICONDUCTORS (REVIEW).
Shklovskii, B.I.
Efros, A.L.
[J]. Soviet physics. Semiconductors, 1980, 14 (05): : 487 - 506
[2] IMPURITY BAND-STRUCTURE IN LIGHTLY DOPED SEMICONDUCTORS
EFROS, AL
VANLIEN, N
SHKLOVSKII, BI
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (10): : 1869 - 1881
[3] THE IMPURITY BANDS IN DOPED SEMICONDUCTORS
MAKLER, SS
ANDA, EV
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (03): : 457 - 466
[4] FORMATION OF IMPURITY BANDS IN DOPED SEMICONDUCTORS
MONECKE, J
KORTUS, J
CORDTS, W
[J]. PHYSICAL REVIEW B, 1993, 47 (15) : 9377 - 9384
[5] CORRELATED SHALLOW IMPURITY BANDS IN DOPED SEMICONDUCTORS
LU, AQ
ZHANG, ZQ
CHAO, KA
ZHU, JL
[J]. PHYSICAL REVIEW B, 1985, 31 (12): : 8087 - 8096
[6] BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS
MORGAN, TN
[J]. PHYSICAL REVIEW, 1965, 139 (1A): : A343 - &
[7] IMPURITY HOPPING TRANSPORT IN MODERATELY DOPED, LIGHTLY-COMPENSATED SEMICONDUCTORS
BARON, R
YOUNG, MH
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (1-2) : 204 - 204
[8] THEORY OF INTER-IMPURITY RADIATIVE RECOMBINATION IN LIGHTLY DOPED SEMICONDUCTORS
OSIPOV, VV
FOIGEL, MG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 311 - 316
[9] THE INFLUENCE OF HYBRIDIZATION OF THE IMPURITY AND THE CONDUCTION BANDS ON THE DENSITY OF STATES OF DOPED SEMICONDUCTORS
RADJENOVIC, B
TJAPKIN, D
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1989, 156 (02): : 487 - 495
[10] THEORY OF IMPURITY BANDS IN SEMICONDUCTORS
CHAO, KA
OLIVEIRA, FA
MAJLIS, N
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 267 - 267

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