PHOTOELECTRICAL CHARACTERISTICS OF ALLOY JUNCTIONS GERMANIUM-GALLIUM ARSENIDE

被引:0
|
作者
BARYSHNIKOV, VF [1 ]
VORONKOV, VP [1 ]
VYATKIN, AP [1 ]
VILISOV, AA [1 ]
机构
[1] VD KUZNETSOV ENGN PHYS INST, TOMSK, USSR
来源
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1973年 / 06期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:143 / 145
页数:3
相关论文
共 50 条
  • [31] STUDY OF DIFFUSION OF GALLIUM AND ARSENIC IN GERMANIUM AT GALLIUM-ARSENIDE HETEROEPITAXY
    EPIKTETOVA, LE
    VASILEVA, LP
    DRUZHINKIN, IF
    MOSKOVKIN, VA
    LAVRENTE.LG
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1973, (01): : 93 - 99
  • [32] Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system
    Gutakovskii, AK
    Katkov, AV
    Katkov, MI
    Pchelyakov, OP
    Revenko, MA
    TECHNICAL PHYSICS LETTERS, 1998, 24 (12) : 949 - 951
  • [33] Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system
    A. K. Gutakovskii
    A. V. Katkov
    M. I. Katkov
    O. P. Pchelyakov
    M. A. Revenko
    Technical Physics Letters, 1998, 24 : 949 - 951
  • [34] EFFECT OF ALLOYING TEMPERATURE ON CHARACTERISTICS OF TUNNEL P-N JUNCTIONS IN GALLIUM ARSENIDE
    ALEKSEYE.ZM
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (10): : 1735 - &
  • [35] DEFECTS AND DIFFUSION IN SILICON, GERMANIUM, AND GALLIUM-ARSENIDE
    GOESELE, UM
    TAN, TY
    JOURNAL OF METALS, 1987, 39 (07): : A6 - A6
  • [36] GROWN SILICON DIOXIDE FILMS ON GERMANIUM AND GALLIUM ARSENIDE
    HALL, MA
    EVITTS, HC
    FLASCHEN, SS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : C216 - C216
  • [37] EFFECTIVE MASS OF DIRECT EXCITONS IN GERMANIUM AND GALLIUM ARSENIDE
    SILIN, AP
    SOVIET PHYSICS SOLID STATE,USSR, 1971, 13 (06): : 1494 - +
  • [38] INTERBAND FARADAY ROTATION AND ELLIPTICITY IN GERMANIUM AND GALLIUM ARSENIDE
    BYSZEWSKI, P
    KALINSKA, B
    KOLODZIEJCZAK, J
    PHYSICA STATUS SOLIDI, 1967, 23 (01): : K53 - +
  • [39] GALLIUM-ARSENIDE FILMS ON RECRYSTALLIZED GERMANIUM FILMS
    CHU, SS
    CHU, TL
    MONROE, S
    WANG, CP
    YANG, HT
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4848 - 4849
  • [40] EPITAXY OF GERMANIUM FILMS ON GALLIUM ARSENIDE BY VACUUM EVAPORATION
    LEVER, RF
    HUMINSKI, EJ
    JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3638 - &