PHOTOELECTRICAL CHARACTERISTICS OF ALLOY JUNCTIONS GERMANIUM-GALLIUM ARSENIDE

被引：0

作者：

BARYSHNIKOV, VF ^{[1
]}

VORONKOV, VP ^{[1
]}

VYATKIN, AP ^{[1
]}

VILISOV, AA ^{[1
]}

机构：

[1] VD KUZNETSOV ENGN PHYS INST, TOMSK, USSR

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1973年 / 06期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：143 / 145

页数：3

共 50 条

[21] ACCEPTOR BEHAVIOUR OF GERMANIUM IN GALLIUM ARSENIDE
CONSTANT.C
PETRESCU.I
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) : 2397 - &
[22] GERMANIUM-DOPED GALLIUM ARSENIDE
ROSZTOCZY, FE
ERMANIS, F
HAYASHI, I
SCHWARTZ, B
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 375 - +
[23] EPITAXIAL GROWTH OF BULK-QUALITY GALLIUM ARSENIDE ON GALLIUM ARSENIDE AND GERMANIUM SUBSTRATES
BOBB, LC
HOLLOWAY, H
MAXWELL, KH
JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3909 - &
[24] GOLD GERMANIUM CONTACTS ON GALLIUM-ARSENIDE
KVIST, A
HU, QH
ANDREN, HO
JOURNAL DE PHYSIQUE, 1989, 50 (C8): : C8465 - C8470
[25] Clementine gallium arsenide/germanium solar array
Garner, JC
JOURNAL OF PROPULSION AND POWER, 1996, 12 (05) : 847 - 851
[26] CONTROLLED VAPOR GROWTH OF GALLIUM ARSENIDE ON GERMANIUM
KONTRIMAS, R
BLAKESLEE, AE
ELECTROCHEMICAL TECHNOLOGY, 1968, 6 (1-2): : 78 - +
[27] DETERMINATION OF ARSENIC IN SILICON GERMANIUM AND GALLIUM ARSENIDE
TUMANOV, AA
SIDORENK.AN
TARADENK.FS
INDUSTRIAL LABORATORY, 1965, 30 (06): : 825 - &
[28] MECHANICAL STRESSES IN HETEROSYSTEM GERMANIUM GALLIUM ARSENIDE
DATSENKO, LI
KLIMENKO, AP
MATVEYEVA, LA
PROKOPENKO, IV
TKHORIK, YA
THIN SOLID FILMS, 1976, 33 (03) : 275 - 280
[29] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS
LOGAN, RA
CHYNOWETH, AG
COHEN, BG
PHYSICAL REVIEW, 1962, 128 (06): : 2518 - &
[30] TRANSPORT AND PHOTOELECTRICAL PROPERTIES OF GALLIUM-ARSENIDE CONTAINING DEEP ACCEPTORS
BROWN, WJ
BLAKEMOR.JS
JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2242 - &

← 1 2 3 4 5 →