ELECTRONIC BEHAVIORS OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS

被引：55

作者：

OKAMOTO, H ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 24卷 / 01期

关键词：

D O I：

10.1016/0038-1098(77)90557-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：23 / 27

页数：5

共 50 条

[1] STATISTICAL CONSIDERATIONS ON ELECTRONIC BEHAVIOR OF THE GAP STATES IN AMORPHOUS-SEMICONDUCTORS
OKAMOTO, H
HAMAKAWA, Y
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 33 (02) : 225 - 234
[2] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
MOTT, NF
DAVIS, EA
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996
[3] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS
BISHOP, SG
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 217 - 217
[4] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (24) : 1469 - 1472
[5] LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
ADLER, D
YOFFA, EJ
[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11): : 1920 - 1929
[6] XEROGRAPHIC SPECTROSCOPY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS
ABKOWITZ, M
ENCK, RC
[J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2567 - 2577
[7] XEROGRAPHIC SPECTROSCOPY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS
ABKOWITZ, MA
ENCK, RC
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 251 - 251
[8] DEFECTS AND ASSOCIATED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
DAVIS, EA
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 71 (1-3) : 113 - 123
[9] ELECTRONIC PROPERTIES AND LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS
OWEN, AE
SPEAR, WE
[J]. PHYSICS AND CHEMISTRY OF GLASSES, 1976, 17 (05): : 174 - 192
[10] SINGLE AND PAIR ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
NGAI, KL
REINECKE, TL
ECONOMOU, EN
[J]. PHYSICAL REVIEW B, 1978, 17 (02) : 790 - 806

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