ELECTRONIC BEHAVIORS OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS

被引：55

作者：

OKAMOTO, H ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 24卷 / 01期

关键词：

D O I：

10.1016/0038-1098(77)90557-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：23 / 27

页数：5

共 50 条

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