LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS

被引：41

作者：

ADLER, D

YOFFA, EJ

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI & ENGN,DEPT PHYS,CAMBRIDGE,MA 02139

来源：

CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE | 1977年 / 55卷 / 11期

关键词：

D O I：

10.1139/v77-268

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1920 / 1929

页数：10

共 50 条

[1] ELECTRONIC PROPERTIES AND LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS
OWEN, AE
SPEAR, WE
[J]. PHYSICS AND CHEMISTRY OF GLASSES, 1976, 17 (05): : 174 - 192
[2] XEROGRAPHIC SPECTROSCOPY OF LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
ABKOWITZ, M
ENCK, RC
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 443 - 446
[3] DENSITY OF LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS
DELADURANTAYE, L
LEPINE, Y
LEWIS, LJ
[J]. CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 425 - 429
[4] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS
BISHOP, SG
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 217 - 217
[5] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (24) : 1469 - 1472
[6] NUCLEAR-SPIN-LATTICE RELAXATION BY LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
JELLISON, GE
BISHOP, SG
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 310 - 310
[7] DEFECTS AND ASSOCIATED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
DAVIS, EA
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 71 (1-3) : 113 - 123
[8] SINGLE AND PAIR ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
NGAI, KL
REINECKE, TL
ECONOMOU, EN
[J]. PHYSICAL REVIEW B, 1978, 17 (02) : 790 - 806
[9] A CALCULATION OF THE DENSITY OF ELECTRONIC STATES FOR AMORPHOUS-SEMICONDUCTORS
BEEBY, JL
HAYES, TM
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 253 - 255
[10] ELECTRONIC BEHAVIORS OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS
OKAMOTO, H
HAMAKAWA, Y
[J]. SOLID STATE COMMUNICATIONS, 1977, 24 (01) : 23 - 27

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