LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS

被引：118

作者：

OVSHINSKY, SR ^{[1
]}

机构：

[1] ENERGY CONVERSION DEVICES INC,TROY,MI 48084

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.36.1469

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1469 / 1472

页数：4

共 50 条

[1] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS
BISHOP, SG
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 217 - 217
[2] CHEMICAL TRENDS FOR LOCALIZED GAP STATES IN AMORPHOUS-SEMICONDUCTORS
SHIMIZU, T
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (07) : 455 - 456
[3] DENSITY OF LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS
DELADURANTAYE, L
LEPINE, Y
LEWIS, LJ
[J]. CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 425 - 429
[4] LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
ADLER, D
YOFFA, EJ
[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11): : 1920 - 1929
[5] LOCALIZED GAP STATES IN AMORPHOUS-SEMICONDUCTORS ESTIMATED BY DIELECTRIC-RELAXATION
SHIMAKAWA, K
NITTA, S
MORI, M
[J]. PHYSICAL REVIEW B, 1977, 16 (10): : 4519 - 4523
[6] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
MOTT, NF
DAVIS, EA
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996
[7] ELECTRONIC PROPERTIES AND LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS
OWEN, AE
SPEAR, WE
[J]. PHYSICS AND CHEMISTRY OF GLASSES, 1976, 17 (05): : 174 - 192
[8] XEROGRAPHIC SPECTROSCOPY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS
ABKOWITZ, M
ENCK, RC
[J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2567 - 2577
[9] XEROGRAPHIC SPECTROSCOPY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS
ABKOWITZ, MA
ENCK, RC
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 251 - 251
[10] ELECTRONIC BEHAVIORS OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS
OKAMOTO, H
HAMAKAWA, Y
[J]. SOLID STATE COMMUNICATIONS, 1977, 24 (01) : 23 - 27

← 1 2 3 4 5 →