THERMAL-OXIDATION RATE OF A SI3N4 FILM AND ITS MASKING EFFECT AGAINST OXIDATION OF SILICON

被引：52
|
作者：
ENOMOTO, T [1 ]
ANDO, R [1 ]
MORITA, H [1 ]
NAKAYAMA, H [1 ]
机构：
[1] MITSUBISHI ELECT CORP,KITA ITAMI WORKS,ITAMI,HYOGO 664,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 06期
关键词：
D O I：
10.1143/JJAP.17.1049
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1049 / 1058
页数：10
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