EFFECT OF ADMIXTURE AND RADIATION DEFECTS ON KINETICS OF SILICON THERMAL-OXIDATION

被引：0
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作者：
UGAI, YA
MITTOVA, IY
EMELYANENKO, VI
MEDVEDEV, NM
ANOKHIN, VZ
机构：
来源：
ZHURNAL FIZICHESKOI KHIMII | 1983年 / 57卷 / 10期
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暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
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页码：2491 / 2493
页数：3
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