RELAXATION OSCILLATIONS AND RECOMBINATION IN EPITAXIAL N-TYPE GALLIUM ARSENIDE

被引：6

作者：

ACKET, GA

SCHEER, JJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 02期

关键词：

D O I：

10.1016/0038-1101(71)90091-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：167 / &

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[1] PHOTOLUMINESCENCE OF EPITAXIAL N-TYPE GALLIUM ARSENIDE FILMS
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[2] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GALLIUM ARSENIDE
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[3] SLOW RELAXATION OF NONEQUILIBRIUM CARRIERS IN PURE EPITAXIAL N-TYPE GALLIUM-ARSENIDE
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[4] ANISOTROPY OF ELECTROPHYSICAL PROPERTIES FOR EPITAXIAL GALLIUM ARSENIDE OF N-TYPE
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[5] RECOMBINATION AND TRAPPING IN EPITAXIAL TYPE GALLIUM ARSENIDE
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[6] TRANSVERSE MAGNETORESISTANCE OF EPITAXIAL FILMS OF N-TYPE GALLIUM-ARSENIDE
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[7] HEAVY DOPED N-TYPE SINGLE CRYSTAL EPITAXIAL LAYERS OF GALLIUM ARSENIDE
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[8] Defect levels in n-type gallium arsenide and gallium aluminum arsenide layers
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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 183 (02): : 281 - 297
[9] RADIATIVE LIFETIMES IN N-TYPE GALLIUM ARSENIDE
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[10] NEGATIVE MAGNETORESISTANCE OF N-TYPE GALLIUM ARSENIDE
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