PHOTOLUMINESCENCE OF EPITAXIAL N-TYPE GALLIUM ARSENIDE FILMS

被引：0

|

作者：

ALFEROV, ZI

GARBUZOV, DZ

ZHILYAEV, YV

MOROZOV, EP

PORTNOI, EL

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 2卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

下载

收藏

页码：1204 / &

相关论文

共 50 条

[1] TRANSVERSE MAGNETORESISTANCE OF EPITAXIAL FILMS OF N-TYPE GALLIUM-ARSENIDE
GORODNICHII, OP
SEITOV, EP
SHAVRIN, AG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05): : 694 - 695
[2] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GALLIUM ARSENIDE
EDDOLLS, DV
PHYSICA STATUS SOLIDI, 1966, 17 (01): : 67 - &
[3] RELAXATION OSCILLATIONS AND RECOMBINATION IN EPITAXIAL N-TYPE GALLIUM ARSENIDE
ACKET, GA
SCHEER, JJ
SOLID-STATE ELECTRONICS, 1971, 14 (02) : 167 - &
[4] ANISOTROPY OF ELECTROPHYSICAL PROPERTIES FOR EPITAXIAL GALLIUM ARSENIDE OF N-TYPE
LAVRENTEVA, LG
KATAEV, YG
MOSKOVKIN, VA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1969, (11): : 159 - +
[5] PHOTOLUMINESCENCE SPECTRA OF EPITAXIAL FILMS OF GALLIUM-ARSENIDE
MARONCHUK, YE
SHERSTYAKOV, AP
SHERSTYAKOVA, VN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1400 - 1401
[6] PHOTOLUMINESCENCE IN COMPENSATED N-TYPE, SI-DOPED GALLIUM ARSENIDE
PETRESCUPRAHOVA, I
WINOGRADOFF, NN
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) : 1873 - +
[7] PHOTOLUMINESCENCE OF EPITAXIAL n-TYPE GaInAsP FILMS.
Kolesnik, L.I.
Loshinskii, A.M.
Rogulin, V.Yu.
Dolginov, L.M.
Chupakhina, V.M.
Soviet physics. Semiconductors, 1979, 13 (06): : 674 - 676
[8] HEAVY DOPED N-TYPE SINGLE CRYSTAL EPITAXIAL LAYERS OF GALLIUM ARSENIDE
WILLIAMS, FV
SOLID-STATE ELECTRONICS, 1964, 7 (11) : 833 - 834
[9] Defect levels in n-type gallium arsenide and gallium aluminum arsenide layers
Saxena, AK
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 183 (02): : 281 - 297
[10] RADIATIVE LIFETIMES IN N-TYPE GALLIUM ARSENIDE
DINGLE, R
RODGERS, KF
APPLIED PHYSICS LETTERS, 1969, 14 (06) : 183 - &

← 1 2 3 4 5 →