共 50 条
- [41] IMPURITY ZONES IN P-TYPE AND N-TYPE GALLIUM ARSENIDE CRYSTALS SOVIET PHYSICS-SOLID STATE, 1961, 3 (01): : 144 - 147
- [42] BEHAVIOR OF BORON IMPURITIES IN N-TYPE GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03): : 633 - 644
- [43] Gallium vacancy production in carbon, oxygen, and arsenic irradiated n-type gallium arsenide MATERIALS MODIFICATION BY ION IRRADIATION, 1998, 3413 : 210 - 224
- [44] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE PHYSICAL REVIEW, 1959, 114 (01): : 59 - 63
- [45] INFLUENCE OF COMPENSATION ON EDGE PHOTOLUMINESCENCE OF EPITAXIAL GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (12): : 1541 - 1543
- [46] Donor metastable states and the polaron effect in n-type gallium arsenide ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1019 - 1023
- [47] PLASMON-PHONON EXCITATION IN N-TYPE GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (10): : 1176 - 1177
- [48] LATTICE-DEFECTS IN QUENCHED N-TYPE GALLIUM-ARSENIDE PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 32 (01): : K63 - K66
- [49] ELECTRICAL CONTACTS TO ION CLEANED N-TYPE GALLIUM-ARSENIDE IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1972, PHP8 (04): : 49 - &
- [50] 2-STREAM INSTABILITY IN N-TYPE GALLIUM-ARSENIDE PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 43 (01): : 89 - 97