RELAXATION OSCILLATIONS AND RECOMBINATION IN EPITAXIAL N-TYPE GALLIUM ARSENIDE

被引：6

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作者：

ACKET, GA

SCHEER, JJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 02期

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D O I：

10.1016/0038-1101(71)90091-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：167 / &

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