RELAXATION OSCILLATIONS AND RECOMBINATION IN EPITAXIAL N-TYPE GALLIUM ARSENIDE

被引：6
|
作者：
ACKET, GA
SCHEER, JJ
机构：
来源：
SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 02期
关键词：
D O I：
10.1016/0038-1101(71)90091-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：167 / &
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