SCHOTTKY-BARRIER MODULATION AT METAL CONTACTS TO CDS AND CDSE

被引：18
|
作者：
BRUCKER, CF [1 ]
BRILLSON, LJ [1 ]
KATNANI, AD [1 ]
STOFFEL, NG [1 ]
MARGARITONDO, G [1 ]
机构：
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期
关键词：
D O I：
10.1116/1.571792
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：590 / 593
页数：4
相关论文
共 50 条
  • [41] EFFECTS OF IMAGE FORCE AND TUNNELING ON CURRENT TRANSPORT IN METAL-SEMICONDUCTOR (SCHOTTKY-BARRIER) CONTACTS
    RIDEOUT, VL
    CROWELL, CR
    SOLID-STATE ELECTRONICS, 1970, 13 (07) : 993 - &
  • [42] EFFECTS OF SURFACE TREATMENTS ON SCHOTTKY-BARRIER FORMATION AT METAL NORMAL-TYPE CDTE CONTACTS
    DHARMADASA, IM
    THORNTON, JM
    WILLIAMS, RH
    APPLIED PHYSICS LETTERS, 1989, 54 (02) : 137 - 139
  • [43] ELECTRON-TRANSPORT MECHANISMS IN METAL SCHOTTKY-BARRIER CONTACTS TO HYDROGENATED AMORPHOUS-SILICON
    HELLER, DE
    DAWSON, RM
    MALONE, CT
    NAG, S
    WRONSKI, CR
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (06) : 2377 - 2384
  • [44] CHARACTERIZATION OF SCHOTTKY-BARRIER DIODES BY MEANS OF MODULATION TECHNIQUE
    KUNZE, U
    KOWALSKY, W
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1597 - 1606
  • [45] Experimental determination of the pressure dependence of the barrier height of metal/[n-type GaAs] Schottky contacts: A critical test of Schottky-barrier models
    Phatak, P.
    Newman, N.
    Dreszer, P.
    Weber, E. R.
    Physical Review B: Condensed Matter, 51 (24):
  • [46] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
    EGLASH, SJ
    NEWMAN, N
    PAN, S
    MO, D
    SHENAI, K
    SPICER, WE
    PONCE, FA
    COLLINS, DM
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5159 - 5169
  • [47] Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs
    Zhang, M
    Knoch, J
    Zhao, QT
    Lenk, S
    Breuer, U
    Mantl, S
    PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, : 457 - 460
  • [48] ELECTROPHYSICAL PROPERTIES OF SCHOTTKY-BARRIER CONTACTS WITH HYDROGENATED AMORPHOUS-SILICON
    STRIKHA, VI
    ILCHENKO, VV
    MEZDROGINA, MM
    ANDREEV, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (03): : 280 - 281
  • [49] WIDE-RANGE OF SCHOTTKY-BARRIER HEIGHT FOR METAL CONTACTS TO GAAS CONTROLLED BY SI INTERFACE LAYERS
    WALDROP, JR
    GRANT, RW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1432 - 1435
  • [50] SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON
    DIMITRIADIS, CA
    LOGOTHETIDIS, S
    ALEXANDROU, I
    APPLIED PHYSICS LETTERS, 1995, 66 (04) : 502 - 504
12345