SCHOTTKY-BARRIER MODULATION AT METAL CONTACTS TO CDS AND CDSE

被引：18

作者：

BRUCKER, CF ^{[1
]}

BRILLSON, LJ ^{[1
]}

KATNANI, AD ^{[1
]}

STOFFEL, NG ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：590 / 593

页数：4

共 50 条

[21] ON THE LOCATION OF THE INTERFACE FERMI LEVEL IN METAL-SEMICONDUCTOR SCHOTTKY-BARRIER CONTACTS
CHOT, T
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02): : 551 - 558
[22] The Effect of the Periphery of Metal-Semiconductor Schottky-Barrier Contacts on their Electrical Characteristics
Torkhov, N. A.
Novikov, V. A.
SEMICONDUCTORS, 2011, 45 (01) : 69 - 84
[23] REFRACTORY-METAL CONTACTS TO GAAS - INTERFACE CHEMISTRY AND SCHOTTKY-BARRIER FORMATION
WALDROP, JR
KOWALCZYK, SP
GRANT, RW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 607 - 610
[24] ELECTRICAL-PROPERTIES OF IDEAL METAL CONTACTS TO GAAS - SCHOTTKY-BARRIER HEIGHT
WALDROP, JR
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 445 - 448
[25] METAL POLYACETYLENE SCHOTTKY-BARRIER DIODES
KANICKI, J
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1984, 105 (1-4): : 203 - 217
[26] FAST-RESPONSE DETECTORS WITH CONTACTS ON SCHOTTKY-BARRIER
VDOVENKOV, VA
PROKOFEVA, SP
USACHEVA, TN
ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (02): : 213 - 216
[27] NUMERICAL-ANALYSIS OF SILICON SCHOTTKY-BARRIER CONTACTS
GUO, SF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C325 - C325
[28] SCHOTTKY-BARRIER EFFECT ON THE EXCITON REFLECTANCE SPECTRA IN CDS
NOVIKOV, BV
UTNASUNOV, SS
FIZIKA TVERDOGO TELA, 1987, 29 (01): : 270 - 272
[29] PIEZOELECTRIC EFFECT IN AU-CDS SCHOTTKY-BARRIER
KUSAKA, M
KANAKURA, M
OKAZAKI, S
SURFACE SCIENCE, 1977, 64 (02) : 793 - 796
[30] SCHOTTKY-BARRIER HEIGHT OF SPUTTERED TIN CONTACTS ON SILICON
FINETTI, M
SUNI, I
BARTUR, M
BANWELL, T
NICOLET, MA
SOLID-STATE ELECTRONICS, 1984, 27 (07) : 617 - 623

← 1 2 3 4 5 →