SCHOTTKY-BARRIER MODULATION AT METAL CONTACTS TO CDS AND CDSE

被引：18

作者：

BRUCKER, CF ^{[1
]}

BRILLSON, LJ ^{[1
]}

KATNANI, AD ^{[1
]}

STOFFEL, NG ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：590 / 593

页数：4

共 50 条

[1] SCHOTTKY-BARRIER HEIGHT OF IDEAL METAL CONTACTS TO GAAS
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[10] EXPERIMENTAL RICHARDSON CONSTANT OF METAL-SEMICONDUCTOR SCHOTTKY-BARRIER CONTACTS
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