PHOTOCONDUCTIVE GAIN GREATER THAN UNITY IN CDSE FILMS WITH SCHOTTKY-BARRIER CONTACTS

被引:0
|
作者
MEHTA, RR
SHARMA, BS
机构
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:63 / &
相关论文
共 50 条
  • [1] PHOTOCONDUCTIVE GAIN GREATER THAN UNITY IN CDSE FILMS WITH SCHOTTKY BARRIERS AT CONTACTS
    MEHTA, RR
    SHARMA, BS
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 325 - 328
  • [2] PHOTOCONDUCTIVE GAIN IN A SCHOTTKY-BARRIER PHOTODIODE
    SOARES, SF
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2A): : 210 - 216
  • [3] SCHOTTKY-BARRIER MODULATION AT METAL CONTACTS TO CDS AND CDSE
    BRUCKER, CF
    BRILLSON, LJ
    KATNANI, AD
    STOFFEL, NG
    MARGARITONDO, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 590 - 593
  • [4] Photoconductive gain in a Schottky barrier photodiode
    Soares, Schubert F.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (2 A): : 210 - 216
  • [5] TITANIUM NITRIDE SCHOTTKY-BARRIER CONTACTS TO GAAS
    WALDROP, JR
    APPLIED PHYSICS LETTERS, 1983, 43 (01) : 87 - 89
  • [6] GAAS ALLOY TPE SCHOTTKY-BARRIER CONTACTS
    OGAWA, M
    NOZAKI, T
    SHINODA, D
    KAWAMURA, N
    ASANABE, S
    NEC RESEARCH & DEVELOPMENT, 1971, (22): : 1 - &
  • [7] EFFECTS OF OXYGEN IMPURITIES IN W FILMS ON W/GAAS SCHOTTKY-BARRIER CONTACTS
    KURIYAMA, Y
    OHFUJI, S
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2446 - 2454
  • [8] FAST-RESPONSE DETECTORS WITH CONTACTS ON SCHOTTKY-BARRIER
    VDOVENKOV, VA
    PROKOFEVA, SP
    USACHEVA, TN
    ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (02): : 213 - 216
  • [9] NUMERICAL-ANALYSIS OF SILICON SCHOTTKY-BARRIER CONTACTS
    GUO, SF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C325 - C325
  • [10] SCHOTTKY-BARRIER HEIGHT OF SPUTTERED TIN CONTACTS ON SILICON
    FINETTI, M
    SUNI, I
    BARTUR, M
    BANWELL, T
    NICOLET, MA
    SOLID-STATE ELECTRONICS, 1984, 27 (07) : 617 - 623