共 50 条
- [43] REFRACTORY-METAL CONTACTS TO GAAS - INTERFACE CHEMISTRY AND SCHOTTKY-BARRIER FORMATION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 607 - 610
- [46] ELECTRICAL-PROPERTIES OF IDEAL METAL CONTACTS TO GAAS - SCHOTTKY-BARRIER HEIGHT JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 445 - 448
- [47] ION-BEAM SPUTTER DEPOSITION OF MOLYBDENUM CONTACTS FOR SCHOTTKY-BARRIER DIODES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 615 - 617
- [48] AVALANCHE MULTIPLICATION OF THE PHOTOCURRENT IN SCHOTTKY-BARRIER STRUCTURES IN THE FORM OF DYSPROSIUM SILICON CONTACTS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 909 - 911