PLZT THIN-FILM GATE NON-VOLATILE MEMORY FET

被引：0
|
作者：
MATSUI, Y
HIGUMA, Y
OKUYAMA, M
NAKAGAWA, T
HAMAKAWA, Y
机构：
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
[2] SETSUNAN UNIV,FAC ENGN,NEYAGAWA,OSAKA 572,JAPAN
来源：
FERROELECTRICS | 1978年 / 19卷 / 3-4期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：166 / 166
页数：1
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