Non-Volatile Memory Based on ZnO Thin-Film Transistor with Self-Assembled Au Nanocrystals

被引：0
|
作者：
Xie, Hui [1 ,2 ]
Wu, Hao [1 ,2 ,3 ]
Liu, Chang [1 ,2 ]
机构：
[1] Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
[3] Wuhan Univ, Hubei Key Lab Nucl Solid Phys, Wuhan 430072, Peoples R China
来源：
NANOMATERIALS | 2024年 / 14卷 / 08期
关键词：
TFT memory; NVMs; nanocrystals; SoP; ALD; OXIDE-SEMICONDUCTOR; PART I; LAYER; DESIGN;
D O I：
10.3390/nano14080678
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Non-volatile memory based on thin-film transistor is crucial for system-on-panel and flexible electronic systems. Achieving high-performance and reliable thin-film transistor (TFT) memory still remains challenging. Here, for the first time, we present a ZnO TFT memory utilizing self-assembled Au nanocrystals with a low thermal budget, exhibiting excellent memory performance, including a program/erase window of 9.8 V, 29% charge loss extrapolated to 10 years, and remarkable endurance characteristics. Moreover, the memory exhibits favorable on-state characteristics with mobility, subthreshold swing, and current on-off ratio of 17.6 cm2V-1s-1, 0.71 V/dec, and 107, respectively. Our study shows that the fabricated TFT memory has great potential for practical applications.
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页数：11
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