TRANSIENT-RESPONSE OF EPITAXIAL GAAS JFET STRUCTURES TO IONIZING-RADIATION

被引：6

作者：

GINELL, WS ^{[1
]}

ZULEEG, R ^{[1
]}

MCNICHOLS, JL ^{[1
]}

NOTTHOFF, JK ^{[1
]}

LEHOVEC, K ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS ASTRONAUT CO, HUNTINGTON BEACH, CA 92646 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327389

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：171 / 179

页数：9

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