TRANSIENT-RESPONSE OF EPITAXIAL GAAS JFET STRUCTURES TO IONIZING-RADIATION

被引：6
|
作者：
GINELL, WS [1 ]
ZULEEG, R [1 ]
MCNICHOLS, JL [1 ]
NOTTHOFF, JK [1 ]
LEHOVEC, K [1 ]
机构：
[1] MCDONNELL DOUGLAS ASTRONAUT CO, HUNTINGTON BEACH, CA 92646 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期
关键词：
D O I：
10.1109/TNS.1973.4327389
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：171 / 179
页数：9
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