IONIZING-RADIATION EFFECTS IN SILICON ON SAPPHIRE FET STRUCTURES

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作者
NEAMEN, DA [1 ]
BUCHANAN, BL [1 ]
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[1] ROME AIR DEV CTR,HANSCOM AFB,MA 01731
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中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:C257 / C257
页数:1
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