THE GROWTH OF SINGLE-CRYSTAL OF 3C-SIC ON THE SI SUBSTRATE BY THE MBE METHOD USING MULTI ELECTRON-BEAM HEATING

被引：23
|
作者：
KANEDA, S
SAKAMOTO, Y
NISHI, C
KANAYA, M
HANNAI, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 09期
关键词：
D O I：
10.1143/JJAP.25.1307
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1307 / 1311
页数：5
相关论文
共 50 条
  • [31] MULTIPLEXING ELECTRON-BEAM PATTERNS USING SINGLE-CRYSTAL THIN-FILMS
    KRAKOW, W
    HOWLAND, LA
    MCKINLEY, G
    JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (10): : 984 - 988
  • [32] Control of nitrogen flux for growth of cubic GaN on 3C-SiC/Si by RF-MBE
    Ohachi, T.
    Kikuchi, T.
    Miyauchi, K.
    Ito, Y.
    Takagi, R.
    Hogiri, M.
    Fujita, K.
    Ariyada, O.
    Wada, M.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E1197 - E1202
  • [33] Growth and characterization of epilayer of SiC on Si (111) substrate using single solid source MBE
    Asghar, M.
    Mahmood, K.
    Nawaz, M. A.
    Tsu, R.
    13TH INTERNATIONAL SYMPOSIUM ON ADVANCED MATERIALS (ISAM 2013), 2014, 60
  • [34] Isotopically-purified Si and 3C-SiC film growth by an ion-beam deposition method
    Tsubouchi, N
    Chayahara, A
    Mokuno, Y
    Kinomura, A
    Horino, Y
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 189 (01): : 169 - 174
  • [35] The growth and characterization of GaN epilayers grown on Si(111) substrate using 3C-SiC intermediate layer
    Kang, JH
    Park, CI
    Jeon, SR
    Lim, KY
    Nahm, KS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S70 - S73
  • [36] Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method
    Seki, Kazuaki
    Harada, Shunta
    Ujihara, Toru
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 311 - +
  • [37] 3C-SiC growth on (001) Si substrates by using a multilayer buffer
    Canino, Andrea
    Severino, Andrea
    Piluso, Nicolo
    La Via, Francesco
    Privitera, Stefania
    Alberti, Alessandra
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 263 - +
  • [38] 3C-SiC on Si Substrates using Pendeo-Epitaxial Growth
    Kim, Byeung C.
    Capano, Michael A.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 219 - 222
  • [39] Initial growth of heteroepitaxial 3C-SiC on Si using energetic species
    Tsubouchi, N
    Chayahara, A
    Kinomura, A
    Horino, Y
    APPLIED PHYSICS LETTERS, 2000, 77 (05) : 654 - 656
  • [40] Epitaxial growth of 3C-SiC on Si(001) using hexamethyldisilane and comparison with growth on Si(111)
    Teker, K
    Jacob, C
    Chung, J
    Hong, MH
    THIN SOLID FILMS, 2000, 371 (1-2) : 53 - 60
12345