Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

被引：6
|
作者：
Seki, Kazuaki [1 ]
Harada, Shunta [2 ]
Ujihara, Toru [2 ]
机构：
[1] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
3C-SiC; bulk crystal; solution growth; polytype control; double positioning boundary; LAYERS; MECHANISM;
D O I：
10.4028/www.scientific.net/MSF.740-742.311
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In this paper, we review our researches on the high-quality 3C-SiC bulk crystal growth. The polytype control and the suppression of defects are essential in the growth 3C-SiC on hexagonal SiC seed crystals. The growth polytype of SiC is usually controlled by the inheritance of the seed crystal. In contrast, we established kinetic polytype control in which the preferential growth of 3C-SiC can be achieved by the difference in the growth rates depending on supersaturation for the polytypes. In the growth of 3C-SiC, double positioning boundaries (DPBs) are often formed by the existence of twinned domain The elimination of DPBs can be achieved utilizing the anisotropy of the step advance velocity.
引用
收藏
页码：311 / +
页数：2
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