THE GROWTH OF SINGLE-CRYSTAL OF 3C-SIC ON THE SI SUBSTRATE BY THE MBE METHOD USING MULTI ELECTRON-BEAM HEATING

被引：23
|
作者：
KANEDA, S
SAKAMOTO, Y
NISHI, C
KANAYA, M
HANNAI, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 09期
关键词：
D O I：
10.1143/JJAP.25.1307
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1307 / 1311
页数：5
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