THERMALLY STABLE, SUPERLATTICE-ENHANCED 1.3-MU-M INGAAS IMSM PHOTODETECTORS ON GAAS SUBSTRATES

被引：6

作者：

CHOUDHURY, ANMM

JAGANNATH, C

NEGRI, A

ELMAN, B

ARMIENTO, CA

机构：

[1] GTE Laboratories Inc., Waltham

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

关键词：

D O I：

10.1109/55.82061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical and electrical characteristics of 1.3-mu-m interdigitated-metal-semiconductor-metal (IMSM) photodetectors on a thermally stable, superlattice-enhanced InGaAs/GaAs structure are reported. Photodetectors fabricated on material that was subjected to a rapid thermal anneal have high internal quantum efficiency and a measured bandwidth of 14 GHz. This structure has the potential for fabrication of low-cost, long-wavelength, monolithic receiver circuits based on GaAs MESFET technology.

引用

页码：281 / 283

页数：3

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