THERMALLY STABLE, SUPERLATTICE-ENHANCED 1.3-MU-M INGAAS IMSM PHOTODETECTORS ON GAAS SUBSTRATES

被引：6
|
作者：
CHOUDHURY, ANMM
JAGANNATH, C
NEGRI, A
ELMAN, B
ARMIENTO, CA
机构：
[1] GTE Laboratories Inc., Waltham
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期
关键词：
D O I：
10.1109/55.82061
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical and electrical characteristics of 1.3-mu-m interdigitated-metal-semiconductor-metal (IMSM) photodetectors on a thermally stable, superlattice-enhanced InGaAs/GaAs structure are reported. Photodetectors fabricated on material that was subjected to a rapid thermal anneal have high internal quantum efficiency and a measured bandwidth of 14 GHz. This structure has the potential for fabrication of low-cost, long-wavelength, monolithic receiver circuits based on GaAs MESFET technology.
引用
收藏
页码：281 / 283
页数：3
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