Electroabsorption waveguide modulators at 1.3 mu m fabricated on GaAs substrates

被引：8
|
作者：
Loi, KK
Shen, L
Wieder, HH
Chang, WSC
机构：
[1] Dept. of Elec. and Comp. Engineering, Univ. of California at San Diego, San Diego
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 09期
关键词：
electrooptic modulation; optoelectronic devices; p-i-n diodes; quantum-confined Stark effect; quantum-well devices;
D O I：
10.1109/68.618487
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An InGaAs-InAlAs multiple-quantum-we (MQW) electroabsorption (EA) waveguide modulator fabricated on a GaAs substrate has been designed and characterized at 1.3-mu m wavelength for microwave signal transmission on an analog fiberoptic link. The modulator structure with a lattice constant 2.5% larger than that of GaAs is grown upon a 0.7-mu m-thick three-stage compositionally step-graded In2Al1-zAs relaxed buffer. The waveguide modulator exhibits a high-electrooptic slope efficiency of 0.56 V-1, a 3-dB electrical bandwidth of 20 GHz, and a large optical saturation intensity in excess of 17 mW. These highspeed optoelectronic modulators could potentially be integrated with on-chip GaAs electronic driver circuits.
引用
收藏
页码：1229 / 1231
页数：3
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