HIGH-SPEED 1.3-MU-M INGAAS GAAS SUPERLATTICE ON SI PHOTODETECTOR

被引：10

作者：

ZIRNGIBL, M

BISCHOFF, JC

ILEGEMS, M

HIRTZ, JP

BARTENLIAN, B

BEAUD, P

HODEL, W

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND

[2] THOMSON CSF,F-91401 ORSAY,FRANCE

[3] UNIV BERN,INST APPL PHYS,CH-3012 BERN,SWITZERLAND

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Integrated optics; Photodetectors;

D O I：

10.1049/el:19900666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High speed metal-semiconductor-metal photodetectors sensitive at 1-3 txm have been realised on Si substrates. The active layer consists of a strained InGaAs/GaAs superlattice grown by molecular beam epitaxy on GaAs-on-Si. The device exhibits a very fast response at 1-3/mi (FWHM <:35 ps), a reasonable low dark current (2 fiA and 8/zA at 10 and 20 V bias, respectively) and a wavelength dependent internal quantum efficiency of 15-50% at 20 V bias. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1027 / 1029

页数：3

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