MEASUREMENT OF VERY LOW TUNNELING CURRENT-DENSITY IN SIO2 USING THE FLOATING-GATE TECHNIQUE

被引：18
|
作者：
FISHBEIN, B
KRAKAUER, D
DOYLE, B
机构：
[1] Advanced Semiconductor Development Group, Digital Equipment Corporation, Hudson
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 12期
关键词：
D O I：
10.1109/55.116965
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The floating-gate technique for measuring extremely low gate currents has been adapted to the measurement of Fowler-Nordheim tunneling currents in metal-oxide-semiconductor (MOS) capacitors. Using a special structure consisting of an MOS capacitor and a monitor transistor sharing a common-gate electrode, it has proved possible to measure tunneling current densities as low as 2 x 10(-13) A/cm2. The Fowler-Nordheim tunneling relationship was found to be obeyed over the entire measurable range of current density.
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页码：713 / 715
页数：3
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