DIELECTRIC CAP DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER

被引：12
|
作者：
CHOI, WJ
LEE, S
KIM, Y
KIM, SK
LEE, JI
KANG, KN
PARK, N
PARK, HL
CHO, K
机构：
[1] YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
[2] SOGANG UNIV, DEPT PHYS, SEOUL 100611, SOUTH KOREA
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1995年 / 14卷 / 20期
关键词：
D O I：
10.1007/BF00462206
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1433 / 1435
页数：3
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