Dielectric cap disordering of GaAs/AlGaAs multiple quantum well by using plasma enhanced chemical vapour deposited SiN capping layer

被引：0
|
作者：
Korea Inst of Science and Technology, Seoul, Korea, Republic of [1 ]
机构：
来源：
J Mater Sci Lett | / 20卷 / 1433-1435期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] DIELECTRIC CAP DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER
    CHOI, WJ
    LEE, S
    KIM, Y
    KIM, SK
    LEE, JI
    KANG, KN
    PARK, N
    PARK, HL
    CHO, K
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1995, 14 (20) : 1433 - 1435
  • [2] ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING
    CHOI, WJ
    LEE, S
    ZHANG, JM
    KIM, Y
    KIM, SK
    LEE, JI
    KANG, KN
    CHO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (4A): : L418 - L421
  • [3] ENHANCED DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY RAPID THERMAL ANNEALING USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER GROWN AT HIGH RF POWER CONDITION
    CHOI, WJ
    LEE, JI
    HAN, IK
    KANG, KN
    KIM, Y
    PARK, HL
    CHO, K
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1994, 13 (05) : 326 - 328
  • [4] CARRIER LIFETIMES IN DIELECTRIC CAP DISORDERED GAAS/ALGAAS MULTIPLE-QUANTUM-WELL WITH SIN CAPPING LAYERS
    CHOI, WJ
    LEE, S
    KIM, Y
    WOO, D
    KIM, SK
    KIM, SH
    LEE, JI
    KANG, KN
    CHU, JH
    YU, SK
    SEO, JC
    KIM, D
    CHO, K
    APPLIED PHYSICS LETTERS, 1995, 67 (23) : 3438 - 3440
  • [5] Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiNx capping layer
    Choi, WJ
    Han, SM
    Shah, SI
    Choi, SG
    Woo, DH
    Lee, S
    Kim, SH
    Lee, JI
    Kang, KN
    Cho, J
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (04) : 624 - 628
  • [6] Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiNx capping layer for dielectric cap quantum well disordering
    Choi, WJ
    Han, SM
    Shah, SI
    Choi, SG
    Woo, DH
    Lee, S
    Kim, HJ
    Han, IK
    Kim, SH
    Lee, JI
    Kang, KN
    Cho, J
    INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 419 - 424
  • [7] Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on GaAs/AlGaAs quantum well intermixing
    Deenapanray, PNK
    Tan, HH
    Fu, L
    Jagadish, C
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2000, 3 (04) : 196 - 199
  • [8] Dielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers
    Yi, HT
    Cho, J
    Choi, WJ
    Woo, DH
    Kim, SH
    Kang, KN
    JOURNAL OF MATERIALS SCIENCE LETTERS, 2002, 21 (22) : 1739 - 1741
  • [9] INTEGRATED EXTERNAL CAVITY GAAS/ALGAAS LASERS USING SELECTIVE QUANTUM WELL DISORDERING
    WERNER, J
    KAPON, E
    STOFFEL, NG
    COLAS, E
    SCHWARZ, SA
    SCHWARTZ, CL
    ANDREADAKIS, N
    APPLIED PHYSICS LETTERS, 1989, 55 (06) : 540 - 542
  • [10] Disordering of AlGaAs/GaAs quantum well structures using low dose oxygen implantation
    1600, (71):
12345