DIELECTRIC CAP DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER

被引：12
|
作者：
CHOI, WJ
LEE, S
KIM, Y
KIM, SK
LEE, JI
KANG, KN
PARK, N
PARK, HL
CHO, K
机构：
[1] YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
[2] SOGANG UNIV, DEPT PHYS, SEOUL 100611, SOUTH KOREA
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1995年 / 14卷 / 20期
关键词：
D O I：
10.1007/BF00462206
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1433 / 1435
页数：3
相关论文
共 41 条
  • [21] First Wafer Effect of Multiple SiO2/SiN Stack Layers Prepared by using Plasma-enhanced Chemical Vapor Deposition
    Kim, Min Su
    Kwon, Hojoong
    Kim, Hyoyoung
    Park, Seung-ho
    Lee, Jeong Woo
    Na, Kyung Pil
    Kong, Chul Min
    Kim, Yong Gab
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2020, 76 (10) : 911 - 915
  • [22] STRUCTURAL-PROPERTIES OF LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SILICON-OXIDE FILMS USING DISILANE AND NITROUS-OXIDE
    SONG, JH
    LEE, GS
    APPLIED PHYSICS LETTERS, 1995, 67 (20) : 2986 - 2988
  • [23] Characterization of low dielectric constant plasma polymer films deposited by plasma-enhanced chemical vapor deposition using decamethyl-cyclopentasiloxane and cyclohexane as the precursors
    Yang, J
    Lee, S
    Park, H
    Jung, D
    Chae, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (01): : 165 - 169
  • [24] ANNEALING BEHAVIOR OF GAAS IMPLANTED WITH SI+ AND SIF+ AND RAPID THERMALLY ANNEALED WITH PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE CAP
    DESOUZA, JP
    SADANA, DK
    BARATTE, H
    CARDONE, F
    APPLIED PHYSICS LETTERS, 1990, 57 (11) : 1129 - 1131
  • [25] Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering
    Yu, JS
    Song, JD
    Lee, YT
    Lim, H
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S458 - S461
  • [26] IMPURITY-FREE LAYER DISORDERING IN P-I-N AND N-I-P ALGAAS-GAAS MULTIPLE-QUANTUM-WELL DEVICE STRUCTURES - THE FERMI-LEVEL EFFECT REVISITED
    SESHADRI, S
    GUIDO, LJ
    MITEV, P
    APPLIED PHYSICS LETTERS, 1995, 67 (04) : 497 - 499
  • [27] Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition
    Carcia, P. F.
    McLean, R. S.
    Groner, M. D.
    Dameron, A. A.
    George, S. M.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)
  • [28] Structural and electrical characterizations of low-dielectric-constant SiOC(-H) thin films deposited by using plasma-enhanced chemical vapor deposition for ULSl interconnects
    Kim, Chang Young
    Jung, An Soo
    Navamathavan, Rangaswamy
    Choi, Chi Kyu
    Lee, Kwang-Man
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (01) : 371 - 375
  • [29] Nano-Mechanical Analyses of Low-Dielectric-Constant SiOC(-H) Thin Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition
    Jung, An Soo
    Kim, Chang Young
    Navamathavan, R.
    Choi, Chi Kyu
    Woo, Jong-Kwan
    Lee, Kwang-Man
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (05) : 2512 - 2517
  • [30] Stability enhancement of polysilicon thin-film transistors using stacked plasma-enhanced chemical vapor deposited SiO2/SiNx gate dielectric
    Choi, BD
    Kim, WS
    So, MS
    Koo, JB
    Kakkad, R
    Mo, YG
    Kim, SC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (9A): : 6417 - 6420
12345