THERMAL-ANALYSIS OF P-N-JUNCTION SECOND BREAKDOWN INITIATION

被引：2

|

作者：

MARS, P

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1972年 / 32卷 / 01期

关键词：

D O I：

10.1080/00207217208938267

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：39 / &

相关论文

共 50 条

[1] ANALYSIS OF P-N-JUNCTION SECOND BREAKDOWN MODE
MARS, P
INTERNATIONAL JOURNAL OF ELECTRONICS, 1972, 32 (02) : 203 - &
[2] ANALYSIS OF A JUNCTION TERMINATION STRUCTURE FOR IDEAL BREAKDOWN VOLTAGE IN P-N-JUNCTION DEVICES
TANAKA, T
MOCHIZUKI, Y
OKAMURA, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 261 - 265
[3] INSB P-N-JUNCTION WITH AVALANCHE BREAKDOWN BEHAVIOR
TU, SL
HUANG, KF
YANG, SJ
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1874 - L1876
[4] PROBABILITY OF TRIGGERING OF AN AVALANCHE IN BREAKDOWN OF A P-N-JUNCTION
SEREZHKIN, YN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 927 - 927
[5] THE BARRIER THERMAL EMF AT A P-N-JUNCTION
BALMUSH, II
DASHEVSKII, ZM
KASIYAN, AI
SEMICONDUCTORS, 1995, 29 (10) : 937 - 941
[6] EFFECT OF INHOMOGENEITIES ON AVALANCHE BREAKDOWN VOLTAGE OF A P-N-JUNCTION
POMORTSEVA, LI
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (08): : 1353 - +
[7] UNIFIED APPROACH TO BREAKDOWN PHENOMENA IN SILICON P-N-JUNCTION
STEPOWICZ, WJ
SOLID-STATE ELECTRONICS, 1979, 22 (01) : 15 - 19
[8] PROTONIC P-N-JUNCTION
LANGER, JJ
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 195 - 198
[9] REMODELING THE P-N-JUNCTION
DAMLJANOVIC, DD
IEEE CIRCUITS & DEVICES, 1993, 9 (06): : 35 - 37
[10] A NEW EXPRESSION FOR BREAKDOWN VOLTAGE OF PRACTICAL LINEARLY GRADED P-N-JUNCTION
SILARD, AP
DUTA, MJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) : 422 - 424

← 1 2 3 4 5 →