THERMAL-ANALYSIS OF P-N-JUNCTION SECOND BREAKDOWN INITIATION

被引：2

|

作者：

MARS, P

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1972年 / 32卷 / 01期

关键词：

D O I：

10.1080/00207217208938267

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：39 / &

相关论文

共 50 条

[41] SILICON P-N-JUNCTION ALLOY DIODES
PEARSON, GL
SAWYER, B
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1348 - 1351
[42] ULTRATHIN GAAS P-N-JUNCTION WIRES
HIRUMA, K
HARAGUCHI, K
KATSUYAMA, T
YAZAWA, M
KAKIBAYASHI, H
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 613 - 618
[43] THERMAL BREAKDOWN IN SILICON P-N JUNCTION DEVICES
KHURANA, BS
SUGANO, T
YANAI, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 763 - &
[44] DEPLETION APPROXIMATION ANALYSIS OF AN EXPONENTIALLY GRADED SEMICONDUCTOR P-N-JUNCTION
PIMBLEY, JM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) : 1957 - 1962
[45] TEMPERATURE ANALYSIS OF P-N-JUNCTION BY SWITCHING DIRECT-CURRENT
NIKOLAEVSKY, IF
RUMENNIK, VI
RADIOTEKHNIKA I ELEKTRONIKA, 1976, 21 (06): : 1294 - 1297
[46] ADAPTATION OF P-N-JUNCTION BURNOUT MODEL TO CIRCUIT ANALYSIS CODES
MCMURRAY, LR
KLEINER, CT
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 76 - 81
[47] OFFSET VOLTAGE AND SPACE-CHARGE LAYER CAPACITANCE OF A LINEARLY GRADED P-N-JUNCTION AND AN ABRUPT P-N-JUNCTION
HO, FD
INTERNATIONAL JOURNAL OF ELECTRONICS, 1990, 69 (02) : 247 - 266
[48] IMPEDANCE OF A P-N-JUNCTION WITH HOT CARRIERS
DADAMIRZAEV, G
GULYAMOV, G
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 325 - 326
[49] PRACTICAL P-N-JUNCTION COLD CATHODE
FAULKNER, KR
ASTRIDGE, RA
HOWORTH, JR
SURRIDGE, RK
APPLIED PHYSICS LETTERS, 1973, 23 (06) : 298 - 299
[50] ON THE THEORY OF P-N-JUNCTION PERTURBED CAVITIES
VESZELY, G
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (03): : 269 - 272

← 1 2 3 4 5 →