REMODELING THE P-N-JUNCTION

被引：10

作者：

DAMLJANOVIC, DD

机构：

[1] Institute of Nuclear Sciences, Vinca, Belgrade

来源：

IEEE CIRCUITS & DEVICES | 1993年 / 9卷 / 06期

关键词：

D O I：

10.1109/101.261890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：35 / 37

页数：3

共 50 条

[1] PROTONIC P-N-JUNCTION
LANGER, JJ
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 195 - 198
[2] PERIPHERAL PHOTORESPONSE OF A P-N-JUNCTION
HOLLOWAY, H
BRAILSFORD, AD
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4641 - 4656
[3] SATURATED PHOTOVOLTAGE OF A P-N-JUNCTION
PARROTT, JE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) : 89 - 93
[4] P-N-JUNCTION IN AMORPHOUS SILICON
MATYAS, M
[J]. CESKOSLOVENSKY CASOPIS PRO FYSIKU SEKCE A, 1977, 27 (01): : 71 - 71
[5] PHOTOCURRENT IN A DIFFUSED P-N-JUNCTION
SINHA, A
CHATTOPADHYAYA, SK
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (04) : 345 - 346
[6] PHOTOCARRIER SPREADING AT A P-N-JUNCTION
GALLANT, M
ZEMEL, A
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) : 4067 - 4069
[7] AMORPHOUS SILICON P-N-JUNCTION
SPEAR, WE
LECOMBER, PG
KINMOND, S
BRODSKY, MH
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (02) : 105 - 107
[8] P-N-JUNCTION CAPACITANCE THERMOMETERS
KATSUHATA, M
YAMAGATA, S
MIYAYAMA, Y
HARIU, T
SHIBATA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05): : 878 - 881
[9] P-N-JUNCTION AS A MEMORY DEVICE
BAPAT, MN
SHRIVASTAVA, SK
SINGH, G
SIVARAMAN, S
[J]. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1985, 23 (02) : 117 - 117
[10] CARRIER TEMPERATURE EFFECTS IN A P-N-JUNCTION
STOKOE, TY
PARROTT, JE
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 811 - 814