PROTONIC P-N-JUNCTION

被引：14

作者：

LANGER, JJ

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 34卷 / 03期

关键词：

D O I：

10.1007/BF00616919

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

下载

页码：195 / 198

页数：4

共 50 条

[1] REMODELING THE P-N-JUNCTION
DAMLJANOVIC, DD
IEEE CIRCUITS & DEVICES, 1993, 9 (06): : 35 - 37
[2] PERIPHERAL PHOTORESPONSE OF A P-N-JUNCTION
HOLLOWAY, H
BRAILSFORD, AD
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4641 - 4656
[3] SATURATED PHOTOVOLTAGE OF A P-N-JUNCTION
PARROTT, JE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) : 89 - 93
[4] PHOTOCURRENT IN A DIFFUSED P-N-JUNCTION
SINHA, A
CHATTOPADHYAYA, SK
SOLID-STATE ELECTRONICS, 1976, 19 (04) : 345 - 346
[5] P-N-JUNCTION IN AMORPHOUS SILICON
MATYAS, M
CESKOSLOVENSKY CASOPIS PRO FYSIKU SEKCE A, 1977, 27 (01): : 71 - 71
[6] PHOTOCARRIER SPREADING AT A P-N-JUNCTION
GALLANT, M
ZEMEL, A
JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) : 4067 - 4069
[7] AMORPHOUS SILICON P-N-JUNCTION
SPEAR, WE
LECOMBER, PG
KINMOND, S
BRODSKY, MH
APPLIED PHYSICS LETTERS, 1976, 28 (02) : 105 - 107
[8] P-N-JUNCTION CAPACITANCE THERMOMETERS
KATSUHATA, M
YAMAGATA, S
MIYAYAMA, Y
HARIU, T
SHIBATA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05): : 878 - 881
[9] P-N-JUNCTION AS A MEMORY DEVICE
BAPAT, MN
SHRIVASTAVA, SK
SINGH, G
SIVARAMAN, S
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1985, 23 (02) : 117 - 117
[10] CARRIER TEMPERATURE EFFECTS IN A P-N-JUNCTION
STOKOE, TY
PARROTT, JE
SOLID-STATE ELECTRONICS, 1975, 18 (09) : 811 - 814