PROTONIC P-N-JUNCTION

被引:14
|
作者
LANGER, JJ
机构
来源
关键词
D O I
10.1007/BF00616919
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
下载
收藏
页码:195 / 198
页数:4
相关论文
共 50 条
  • [31] CHARACTERIZATION OF LINEARLY GRADED P-N-JUNCTION
    RUSTAGI, SC
    CHATTOPADHYAYA, SK
    SOLID-STATE ELECTRONICS, 1979, 22 (09) : 819 - 827
  • [32] AN INVESTIGATION ON P-N-JUNCTION ETCH STOP
    WU, CR
    SENSORS AND ACTUATORS A-PHYSICAL, 1993, 35 (03) : 181 - 187
  • [33] EXACT SOLUTION FOR THE PERIPHERAL PHOTORESPONSE OF A P-N-JUNCTION
    SANDER, LM
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2057 - 2059
  • [34] SPECTRAL RESPONSE OF A LATERALLY ILLUMINATED P-N-JUNCTION
    SETH, BM
    BHATNAGAR, PK
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1976, 41 (06) : 621 - 624
  • [35] INSB P-N-JUNCTION WITH AVALANCHE BREAKDOWN BEHAVIOR
    TU, SL
    HUANG, KF
    YANG, SJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1874 - L1876
  • [36] OSCILLATIONS IN A HOT-CARRIER P-N-JUNCTION
    VEINGER, AI
    KOCHARYAN, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 389 - 392
  • [37] A PHOTOELECTRIC METHOD FOR MEASURING THE DEPTH OF A P-N-JUNCTION
    ANGELOVA, LA
    KOZLOV, AY
    TOLSTIKHIN, VI
    SOVIET MICROELECTRONICS, 1982, 11 (02): : 84 - 90
  • [38] PROBABILITY OF TRIGGERING OF AN AVALANCHE IN BREAKDOWN OF A P-N-JUNCTION
    SEREZHKIN, YN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 927 - 927
  • [39] BOUNDARY-LAYER IN P-N-JUNCTION THEORY
    VASILEVA, AB
    KARDOSYSOEV, AF
    STELMAKH, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 784 - 786
  • [40] Optimization of impurity profile for p-n-junction in heterostructures
    E. L. Pankratov
    B. Spagnolo
    The European Physical Journal B - Condensed Matter and Complex Systems, 2005, 46 : 15 - 19