共 50 条
- [35] INSB P-N-JUNCTION WITH AVALANCHE BREAKDOWN BEHAVIOR JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1874 - L1876
- [36] OSCILLATIONS IN A HOT-CARRIER P-N-JUNCTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 389 - 392
- [37] A PHOTOELECTRIC METHOD FOR MEASURING THE DEPTH OF A P-N-JUNCTION SOVIET MICROELECTRONICS, 1982, 11 (02): : 84 - 90
- [38] PROBABILITY OF TRIGGERING OF AN AVALANCHE IN BREAKDOWN OF A P-N-JUNCTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 927 - 927
- [39] BOUNDARY-LAYER IN P-N-JUNCTION THEORY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 784 - 786
- [40] Optimization of impurity profile for p-n-junction in heterostructures The European Physical Journal B - Condensed Matter and Complex Systems, 2005, 46 : 15 - 19