AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer

被引：0

作者：

Hsu, Che-Ching ^{[1
]}

Shen, Pei-Chien ^{[1
]}

Zhong, Yi-Nan ^{[1
]}

Hsin, Yue-Ming ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, 300 Zhongda Rd, Taoyuan 32001, Taiwan

来源：

MRS ADVANCES | 2018年 / 3卷 / 03期

关键词：

D O I：

10.1557/adv.2017.626

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, AlGaN/GaN MIS-HEMTs with a p-GaN cap layer and ALD deposited Al2O3 gate insulator were fabricated. Devices with two different thicknesses of p-GaN cap layers were investigated and compared. AlGaN/GaN MIS-HEMT with an 8-nm p-GaN cap showed a better DC characteristics than device with a 5-nm p-GaN cap. The drain current of 662.9 mA/mm, a high on/off current ratio of 2.67 x 10(9) and a breakdown voltage of 672 V were measured in device with an 8-nm p-GaN cap. In addition, lateral leakage current was investigated by using adjacent MIS gate structures with a separation of 3 mu m to investigate the leakage current.

引用

页码：143 / 146

页数：4

共 50 条

[1] AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer
Che-Ching Hsu
Pei-Chien Shen
Yi-Nan Zhong
Yue-Ming Hsin
MRS Advances, 2018, 3 (3) : 143 - 146
[2] Device Characteristics of AlGaN/GaN HEMTs with p-GaN Cap Layer
Li, Chih-Hao
Jiang, Yan-Cheng
Tsai, Hsin-Chang
Zhong, Yi-Nan
Hsin, Yue-ming
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (11) : S3125 - S3128
[3] Improved p-GaN/AlGaN/GaN HEMTs with magnetronsputtered AlN cap layer
Jia, Mao
Hou, Bin
Yang, Ling
Xue, Zhiqiang
Xiao, Qian
Zhang, Meng
Lu, Hao
Wu, Mei
Hong, Xitong
Du, Jiale
Chang, Qingyuan
Wang, Xiao
Li, Yang
Ao, Jinping
Ma, Xiaohua
Hao, Yue
APPLIED SURFACE SCIENCE, 2025, 682
[4] The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT
Liu, Kai
Wang, Runhao
Wang, Chong
Zheng, Xuefeng
Ma, Xiaohua
Bai, Junchun
Cheng, Bin
Liu, Ruiyu
Li, Ang
Zhao, Yaopeng
Hao, Yue
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (07)
[5] AlGaN/GaN MIS-HEMTs with In Situ SiNx as Gate Dielectric and Passivation Layer
Chen, Jingxiong
Zhou, Quanbin
Liu, Xiaoyi
Wang, Hong
2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019), 2019,
[6] Drain current DLTS of AlGaN-GaN MIS-HEMTs
Okino, T
Ochiai, A
Ohno, Y
Kishimoto, S
Maezawa, K
Mizutani, I
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (08) : 523 - 525
[7] Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer
Yoshida, S.
Sakaida, Y.
Asubar, J. T.
Tokuda, H.
Kuzuhara, M.
2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2015,
[8] Effect of temperature on cryogenic characteristics of AlGaN/GaN MIS-HEMTs
Endoh, Akira
Watanabe, Issei
Yamashita, Yoshimi
Mimura, Takashi
Matsui, Toshiaki
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S964 - S967
[9] Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling
Dutta, Gourab
DasGupta, Nandita
DasGupta, Amitava
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (09) : 3602 - 3608
[10] Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs
Ostermaier, C.
Lagger, P.
Prechtl, G.
Grill, A.
Grasser, T.
Pogany, D.
APPLIED PHYSICS LETTERS, 2017, 110 (17)

← 1 2 3 4 5 →