Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer

被引：0

作者：

Yoshida, S. ^{[1
]}

Sakaida, Y. ^{[1
]}

Asubar, J. T. ^{[1
]}

Tokuda, H. ^{[1
]}

Kuzuhara, M. ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan

来源：

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2015年

关键词：

AlGaN/GaN HEMT; gan cap layer; current collapse;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with a GaN cap layer. The maximum drain current was kept constant at around 0.4 A/mm for a GaN cap layer thickness up to 5 nm. It was found that the degree of current collapse was gradually improved when the GaN cap thickness was increased from 0 (without cap) to 10 nm.

引用

页数：2

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