AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer

被引：0

作者：

Hsu, Che-Ching ^{[1
]}

Shen, Pei-Chien ^{[1
]}

Zhong, Yi-Nan ^{[1
]}

Hsin, Yue-Ming ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, 300 Zhongda Rd, Taoyuan 32001, Taiwan

来源：

MRS ADVANCES | 2018年 / 3卷 / 03期

关键词：

D O I：

10.1557/adv.2017.626

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, AlGaN/GaN MIS-HEMTs with a p-GaN cap layer and ALD deposited Al2O3 gate insulator were fabricated. Devices with two different thicknesses of p-GaN cap layers were investigated and compared. AlGaN/GaN MIS-HEMT with an 8-nm p-GaN cap showed a better DC characteristics than device with a 5-nm p-GaN cap. The drain current of 662.9 mA/mm, a high on/off current ratio of 2.67 x 10(9) and a breakdown voltage of 672 V were measured in device with an 8-nm p-GaN cap. In addition, lateral leakage current was investigated by using adjacent MIS gate structures with a separation of 3 mu m to investigate the leakage current.

引用

页码：143 / 146

页数：4

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